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US Patent 11662656 Mask and method of forming the same

Patent 11662656 was granted and assigned to Taiwan Semiconductor Manufacturing Company on May, 2023 by the United States Patent and Trademark Office.

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Is a
Patent
Patent
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Patent attributes

Patent Applicant
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Current Assignee
Taiwan Semiconductor Manufacturing Company
Taiwan Semiconductor Manufacturing Company
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
116626560
Date of Patent
May 30, 2023
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Patent Application Number
171009700
Date Filed
November 23, 2020
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Patent Citations
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US Patent 9146469 Middle layer composition for trilayer patterning stack
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US Patent 9184054 Method for integrated circuit patterning
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US Patent 9213234 Photosensitive material and method of lithography
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US Patent 9223220 Photo resist baking in lithography process
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US Patent 9256123 Method of making an extreme ultraviolet pellicle
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US Patent 9256133 Apparatus and method for developing process
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US Patent 9529268 Systems and methods for improving pattern transfer
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US Patent 10845698 Mask, method of forming the same and method of manufacturing a semiconductor device using the same
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...
Patent Citations Received
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US Patent 12066757 Mask and method of forming the same
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Patent Primary Examiner
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Daborah Chacko-Davis
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CPC Code
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G03F 1/76
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G03F 1/24
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G03F 1/80
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G03F 1/52
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G03F 1/54
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A mask includes a substrate, a reflective multilayer, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer is disposed over the substrate. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective multilayer and the absorption layer and in the mask black border region, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.

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