Techniques relating to a micro-electro-mechanical (MEMS) device configured to measure direct axial and shear stress components of a stress tensor are described. The MEMS device includes a first and second circuit configured in a double rosette structure coupled with a third circuit in a standard rosette structure to form a triple rosette piezo-resistive gauge circuit. The first circuit includes at least one piezoresistive element suspended from a substrate, and at least one piezoresistive element fixed to the substrate. The second circuit includes each piezoresistive element fixed to the substrate. The third circuit includes at least one piezoresistive element fixed to the substrate. Additionally, the MEMS device may be coupled to one or more processing systems to determine a mechanical stress tensor that is applied to the MEMS device based on measurements received from the MEMS device.