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US Patent 11502223 Epitaxial oxide materials, structures, and devices

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Contents

Is a
Patent
Patent

Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
11502223
Date of Patent
November 15, 2022
Patent Application Number
17653824
Date Filed
March 7, 2022
Patent Citations
‌
US Patent 10636916 High electron mobility thin film transistors
‌
US Patent 11175447 Waveguide in-coupling using polarized light emitting diodes
‌
US Patent 10475956 Optoelectronic device
Patent Citations Received
‌
US Patent RE49869 Group-III nitride devices and systems on IBAD-textured substrates
0
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US Patent 12125946 Method and epitaxial oxide device with impact ionization
0
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US Patent 12095006 Epitaxial oxide device with impact ionization
0
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US Patent 12087880 Epitaxial oxide materials, structures, and devices
0
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US Patent 12074195 Semiconductor device
0
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US Patent 11855152 Ultrawide bandgap semiconductor devices including magnesium germanium oxides
0
Patent Primary Examiner
‌
Mark W Tornow
CPC Code
‌
H01S 5/3206
‌
H01L 33/04
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H01L 33/002
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H01L 33/26

A semiconductor structure can include a substrate comprising a first in-plane lattice constant, a graded layer on the substrate, and a first region of the graded layer comprising a first epitaxial oxide material comprising a second in-plane lattice constant. The graded layer on the substrate can include (Al

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