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US Patent 11476268 Methods of forming electronic devices using materials removable at different temperatures

Patent 11476268 was granted and assigned to Micron Technology on October, 2022 by the United States Patent and Trademark Office.

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
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Current Assignee
Micron Technology
Micron Technology
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Date Filed
May 29, 2020
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Date of Patent
October 18, 2022
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Patent Applicant
Micron Technology
Micron Technology
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Patent Application Number
16887178
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Patent Citations
‌
US Patent 10468259 Charge-trap layer separation and word-line isolation in a 3-D NAND structure
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US Patent 10535733 Method of forming a nanosheet transistor
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US Patent 10553498 Integrated circuit with replacement gate stacks and method of forming same
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US Patent 10553439 Multiple nanosecond laser pulse anneal processes and resultant semiconductor structure
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US Patent 10014292 3D semiconductor device and structure
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US Patent 10115723 Complementary metal oxide semiconductor (CMOS) devices employing plasma-doped source/drain structures and related methods
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US Patent 10147634 Techniques for trench isolation using flowable dielectric materials
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US Patent 10325912 Semiconductor structure cutting process and structures formed thereby
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US Patent 10460933 Two-step process for gapfilling high aspect ratio trenches with amorphous silicon film
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Patent Inventor Names
Kunal Shrotri
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Chandra S. Tiwari
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Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
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Patent Number
11476268
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Patent Primary Examiner
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Allison Bernstein
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CPC Code
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H01L 27/11582
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H01L 27/11585
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H01L 27/11519
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H01L 27/11556
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