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US Patent 10553439 Multiple nanosecond laser pulse anneal processes and resultant semiconductor structure

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Patent
Patent
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Patent attributes

Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
0
Patent Number
105534390
Patent Inventor Names
Aritra Dasgupta0
Oleg Gluschenkov0
Date of Patent
February 4, 2020
0
Patent Application Number
158190920
Date Filed
November 21, 2017
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Patent Citations Received
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US Patent 12069856 Methods of forming electronic devices using materials removable at different temperatures
0
‌
US Patent 11476268 Methods of forming electronic devices using materials removable at different temperatures
Patent Primary Examiner
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Joshua King
0
Patent abstract

Semiconductor structures and methods of fabricating the same using multiple nanosecond pulsed laser anneals are provided. The method includes exposing a gate stack formed on a semiconducting material to multiple nanosecond laser pulses at a peak temperature below a melting point of the semiconducting material.

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