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US Patent 10157799 Multi-gate device and method of fabrication thereof

OverviewStructured DataIssuesContributors
Is a
Patent
Patent
Date Filed
January 26, 2018
Date of Patent
December 18, 2018
Patent Application Number
15880584
Patent Citations Received
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US Patent 12132082 Channel mobility improvement
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US Patent 11482594 Semiconductor devices with backside power rail and method thereof
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US Patent 11489078 Lightly-doped channel extensions
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US Patent 11508736 Method for forming different types of devices
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US Patent 12062721 Latch-up prevention
0
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US Patent 12068318 Method of forming epitaxial features
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US Patent 12074206 Integrated circuit device with improved reliability
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US Patent 12080603 Active region cut process
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US Patent 12078551 Complementary bipolar junction transistor
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US Patent 12087842 Inner spacer features for multi-gate transistors
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•••
Patent Inventor Names
Kuo-Cheng Ching
0
Carlos H Diaz
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Chih-Hao Wang
0
Ching-Wei Tsai
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Wai-Yi Lien
0
Ying-Keung Leung
0
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10157799
Patent Primary Examiner
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Moazzam Hossain

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