Patent attributes
Complementary metal oxide semiconductor (CMOS) devices employing plasma-doped source/drain structures and related methods are disclosed. In certain aspects, a source and drain of a CMOS device are formed at end portions of a channel structure by plasma doping end portions of the channel structure above solid state solubility of the channel structure, and annealing the end portions for liquid phase epitaxy and activation (e.g., superactivation). In this manner, the source and drain can be integrally formed in the end portions of the channel structure to provide coextensive surface area contact between the source and drain and the channel structure for lower channel contact resistance. This is opposed to forming the source/drain using epitaxial growth that provides an overgrowth beyond the end portion surface area of the channel structure to reduce channel contact resistance, which may short adjacent channels structures.
