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CFD Research Corporation STTR Phase I Award, September 2020

A STTR Phase I contract was awarded to CFD Research Corporation in September, 2020 for $167,480.0 USD from the U.S. Department of Defense and Defense Microelectronics Activity.

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Contents

sbir.gov/node/1919447
Is a
SBIR/STTR Awards
SBIR/STTR Awards

SBIR/STTR Award attributes

SBIR/STTR Award Recipient
CFD Research Corporation
CFD Research Corporation
0
Government Agency
U.S. Department of Defense
U.S. Department of Defense
0
Government Branch
‌
Defense Microelectronics Activity
0
Award Type
STTR0
Contract Number (US Government)
HQ072720P00410
Award Phase
Phase I0
Award Amount (USD)
167,4800
Date Awarded
September 4, 2020
0
End Date
March 18, 2021
0
Abstract

Radiation effects in microelectronic components are a significant concern for the reliability of DoD systems that operate at high altitudes or in outer space. Typical characterization efforts focus on macroscale degradation signatures from electrical measurements at device terminals. However, a comprehensive analysis of radiation-induced physical defects is not possible based solely on terminal measurements. CFD Research Corporation and Arizona State University propose a predictive modeling effort to complement a detailed experimental approach to address this challenge. We will perform detailed physics-based modeling of the radiation response of a selected semiconductor device, and use it with the electrical characterization data to guide Transmission Electron Microscopy-based nanoscale material characterization. We will utilize the device simulation and measurement data to develop Artificial Intelligence/Machine Learning-based predictive models for quantitative correlation of the nanoscale material properties with macroscale electrical properties. In Phase I, we will perform a feasibility study based on electrical and material characterization of a simple device structure and relevant radiation effect, while using the data to develop behavioral models for the radiation effects. In Phase II, we will further develop and demonstrate the predictive model using additional device structures, material systems, and radiation effects.

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