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US Patent 10505530 Positive logic switch with selectable DC blocking circuit

Patent 10505530 was granted and assigned to pSemi on December, 2019 by the United States Patent and Trademark Office.

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Contents

Is a
Patent
Patent

Patent attributes

Patent Applicant
pSemi
pSemi
Current Assignee
pSemi
pSemi
Patent Jurisdiction
United States Patent and Trademark Office
United States Patent and Trademark Office
Patent Number
10505530
Date of Patent
December 10, 2019
Patent Application Number
15939128
Date Filed
March 28, 2018
Patent Citations
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US Patent 10158285 Circuit and method for operating the circuit
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US Patent 10320379 Transistor-based radio frequency (RF) switch
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US Patent 10050616 Devices and methods for improving voltage handling and/or bi-directionality of stacks of elements when connected between terminals
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US Patent 10153763 Method and apparatus for use in improving linearity of MOSFETs using an accumulated charge sink
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US Patent 10153767 Switch circuit and method of switching radio frequency signals
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US Patent 10236872 AC coupling modules for bias ladders
Patent Citations Received
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US Patent 12136922 Integrated resistor network and method for fabricating the same
0
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US Patent 11870431 AC coupling modules for bias ladders
0
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US Patent 12081211 High power positive logic switch
0
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US Patent 11476849 High power positive logic switch
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US Patent 10630280 AC coupling modules for bias ladders
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US Patent 10862473 Positive logic switch with selectable DC blocking circuit
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US Patent 10886911 Stacked FET switch bias ladders
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US Patent 11018662 AC coupling modules for bias ladders
...
Patent Primary Examiner
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Kenneth B Wells
Patent abstract

A positive-logic FET switch stack that does not require a negative bias voltage, exhibits high isolation and low insertion/mismatch loss, and may withstand high RF voltages. Embodiments include a FET stack comprising series-coupled positive-logic FETs (i.e., FETs not requiring a negative voltage supply to turn OFF), series-coupled on at least one end by an “end-cap” FET of a type that turns OFF when its VGS is zero volts. The one or more end-cap FETs provide a selectable capacitive DC blocking function or a resistive signal path. Embodiments include a stack of FETs of only the zero VGS type, or a mix of positive-logic and zero VGS type FETs with end-cap FETs of the zero VGS type. Some embodiments withstand high RF voltages by including combinations of series or parallel coupled resistor ladders for the FET gate resistors, drain-source resistors, body charge control resistors, and one or more AC coupling modules.

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