KYMA TECHNOLOGIES, INC. SBIR Phase II Award, February 2019

Kyma will advance the hydride vapor phase epitaxy (HVPE) growth technology for producing high quality crystalline layers of β-Ga2O3, β-(Al,Ga)2O3, and β-(In,Ga)2O3 layers on single crystal β-Ga2O3 substrates. The electrical and structural quality of these materials will be optimized over a range of doping levels and alloy compositions, and their uniformity across the wafer will also be optimized. These optimized processes will be combined to create state-of-the-art delta-doped β-Ga2O3 field effect transistor epiwafers and modulation doped β-(Al,Ga)2O3/Ga2O3 high electron mobility transistor epiwafers and related test structures for delivery to the Air Force for materials and device level testing and evaluation.